Wide dynamic range, 0.8 to 6 GHz LNA in 45 nm digital SOI CMOS

Author

Lee, Jangjoon ; Jung, Byunghoo

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2011

fDate

15-18 May 2011

Firstpage

1792

Lastpage

1795

Abstract

We present a wide dynamic range, dual-mode low noise amplifier (LNA) operating in 0.8 to 6 GHz, which is suitable for a multi-band multi-standard front-end in a scaled CMOS technology and a low supply voltage operation. The digitally controlled high-sensitivity and high-linearity modes enable a low noise and a high linearity according to an input power to the LNA. In measurement, the LNA shows a power gain of 9.4 to 7.0 dB, a noise figure (NF) of 3.0 to 3.6 dB in high-sensitivity mode, and an input-referred 1-dB compression point (P1dB) of up to +4.2 dBm in high-linearity mode. The LNA draws 5.6 mA from a 1.1 V supply voltage in high-sensitivity mode and does not consume power in high-linearity mode. The design was implemented in 45 nm digital SOI CMOS technology.

Keywords

CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; low-power electronics; silicon-on-insulator; MMIC amplifiers; SOI CMOS; current 5.6 mA; dynamic range; frequency 0.8 GHz to 6 GHz; gain 7.0 dB to 9.4 dB; high-linearity mode; high-sensitivity mode; low noise amplifiers; noise figure 3.0 dB to 3.6 dB; silicon-on-insulator; size 45 nm; voltage 1.1 V; CMOS integrated circuits; CMOS technology; Gain; Linearity; Noise; Noise measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5937932

Filename

5937932