Title :
Gate burnout of small signal MODFET´s at TLP stress
Author :
Vashchenko, V.A. ; Martynov, J B ; Sinkevitch, V.F.
Author_Institution :
State Research Institute, Russia
Abstract :
The gate burnout of GaAlAs/GaAs and pseudomorphic InGaAs channel on GaAs substrate MODFETs have been studied at the gate 10 ns transmission line pulse overstress. The snapback gate-drain pulse characteristic is measured. Using 2-D numerical simulation it is shown, that the snapback mechanism is the double avalanche injection current instability and filamentation in the MODFET´s nondoped layers.
Keywords :
Avalanche breakdown; Current density; Degradation; Gallium arsenide; HEMTs; MODFET circuits; Numerical simulation; Optical microscopy; Pulse measurements; Stress;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1997.634221
