• DocumentCode
    1994325
  • Title

    A High Performance Monolithic GaAs SPDT Switch

  • Author

    Bedard, B.E. ; Barlas, A.D. ; Gold, R.B.

  • Author_Institution
    Adams-Russell Co., Burlington, Massachusetts, USA.
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    936
  • Lastpage
    939
  • Abstract
    A monolithic SPDT GaAs FET switch covering DC to 4 GHz has been developed with RF performance comparable to high performance PIN diode designs. Insertion loss of 0.8 dB from DC to 4GHz and isolation of 35 dB at 1.5GHz have been achieved. The MMIC incorporates four 1×1200um FETs in a series-shunt configuration with airbridge interconnects on a chip with overall size of 0.6×0.6mm.
  • Keywords
    FETs; Gallium arsenide; Inductors; Insertion loss; Integrated circuit interconnections; MMICs; Performance loss; Radio frequency; Resistors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333598
  • Filename
    4132286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1994325