Title :
Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors
Author :
Neitzert, Heinz-Christoph ; Cappa, Valeria ; Crovato, Rosella
Author_Institution :
Centro Studi e Laboratory Telecomunicazioni, Italy
Abstract :
An electrostatic discharge sensitivity study of four different types of InGaAsAnP avalanche photodiodes revealed that destruction occurred generally during negative pulse application at pulse amplitudes between 700V and 1400V. Photoluminescence and differential phase contrast imaging has been used for failure localization. A correlation between the location of the device breakdown and the active area inhomogeneity has been found for one type of avalanche photodiode.
Keywords :
Avalanche photodiodes; Electric breakdown; Electrodes; Electrostatic discharge; Geometry; Indium gallium arsenide; Indium phosphide; Nonuniform electric fields; Photodetectors; Photoluminescence;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1997.634222
