Title :
Toleranced Equvivalent Circuit Elements as a Function of Gate and Drain Volatages for MMIC Gass FETS and TEGFETS
Author :
Montoriol, G. ; Le Bruan, M. ; Parisot, M. ; Pavlidis, D. ; Rumelhard, C. ; Sentubery, C.
Author_Institution :
THOMSON CSF - DHM/DAG - Dominate de Corbeville - BP 10 - 91401 - ORSAY - FRANCE
Abstract :
MESFET and TEGFET equivalent circuit models are given as a function of drain and gate bias voltages. The models are prepared to include the dispersions on the characteristics of one wafer or from wafer to wafer. Two GaAs MESFETs having 1um and 0.5 ¿m gate llngths and an 0.5¿m TEGFET are treated. An examp1e is given for a full amplifier study.
Keywords :
Electrical resistance measurement; Equivalent circuits; FETs; Gallium arsenide; HEMTs; MESFET circuits; MMICs; MODFETs; Scattering parameters; Voltage;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333612
