Title :
Integrated half-bridge switch using 70µm thin devices and hollow interconnects
Author :
Solomon, Adane Kassa ; Li, Jianfeng ; Castellazzi, Alberto ; Johnson, Mark
Author_Institution :
Power Electron., Machine & Control Group, Univ. of Nottingham, Nottingham, UK
Abstract :
An application oriented integration concept for half-bridge switch assembly has been developed based on the latest generation Infineon Technologies 70um thin IGBTs and diodes, rated at 200A/600V. This paper addresses the thermo-mechanical simulation to optimize the designed assembly along with three different cylinderical bump shapes for reducing the stress and creep strain development in the solder joints. The simulation results show that effect of the bump shape on thermal performance is negligible, however thin hollow cylinder type can reduce the creep strain accumulation in the solder joints as compared to solid and thick cylinder bumps. A preliminary experimental test was also carried out and the functionality of the assembly was demonstrated.
Keywords :
creep; insulated gate bipolar transistors; interconnections; optimisation; power semiconductor diodes; power semiconductor switches; solders; thin film devices; IGBT diode; current 200 A; cylinderical bump shape; hollow cylinder; hollow interconnect; integrated half-bridge switch assembly; optimization; size 70 mum; solder joints; thermal performance; thermomechanical simulation; thin IGBT device; voltage 600 V; Creep; Insulated gate bipolar transistors; Soldering; Strain; Stress; Switches;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342244
