• DocumentCode
    1995179
  • Title

    Progress in Microwave High-Power Devices

  • Author

    Hori, Shigekazu

  • Author_Institution
    Microwave Solid-state department, Komukai works, Toshita Corporation, 72 Horikawa-cho, Saiwaiku, Kawasaki 210, Japan.
  • fYear
    1987
  • fDate
    7-11 Sept. 1987
  • Firstpage
    102
  • Lastpage
    109
  • Abstract
    This paper describes the recent progress of the microwave high-power devices in Japan, especially forcussing on GaAs power FETs. The fabrication process of power GaAs FET chips, and the internally matched power FETs covering from C- to Ka-band are described. New compound semiconductor devices such as InP MISFETs and HEMTs are also forcussed.
  • Keywords
    Electromagnetic heating; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; MOCVD; MODFETs; Microwave FETs; Microwave devices; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1987. 17th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1987.333702
  • Filename
    4132329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1995179