Title :
Progress in Microwave High-Power Devices
Author_Institution :
Microwave Solid-state department, Komukai works, Toshita Corporation, 72 Horikawa-cho, Saiwaiku, Kawasaki 210, Japan.
Abstract :
This paper describes the recent progress of the microwave high-power devices in Japan, especially forcussing on GaAs power FETs. The fabrication process of power GaAs FET chips, and the internally matched power FETs covering from C- to Ka-band are described. New compound semiconductor devices such as InP MISFETs and HEMTs are also forcussed.
Keywords :
Electromagnetic heating; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; MOCVD; MODFETs; Microwave FETs; Microwave devices; Thermal resistance;
Conference_Titel :
Microwave Conference, 1987. 17th European
Conference_Location :
Rome, Italy
DOI :
10.1109/EUMA.1987.333702
