Design and Realisation of High Power GaAs CW and Pulsed Impatt Sources in the Ku Band

This paper is mainly concerned with the optimization of high power CW and pulsed GaAs IMPATT diodes in the Ku band (12-18 GHz). The theoretical model used describes stationary or non stationary carrier motion in the whole semiconductor structure and accounts self - consistently for thermal effects and packaging/circuit loading. Double Drift structures are shown to be superior for pulsed operation while for CW operation Single Drift structures are quite competitive if the junction temperature is kept below 200°C. Corresponding optimum devices are presented together with the optimum circuit configuration.