Title :
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Author :
Agarwal, A. ; Eaglesham, D.J. ; Gossmann, H.-J. ; Pelaz, L. ; Herner, S.B. ; Jacobson, D.C. ; Haynes, T.E. ; Erokhin, Y. ; Simonton, R.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x/sub j/ is limited to /spl ges/100 nm at 1050/spl deg/C. We term this enhancement, which arises in the presence of B atomic concentrations at the surface of /spl ap/6%, Boron-Enhanced-Diffusion (BED).
Keywords :
boron; diffusion; elemental semiconductors; interstitials; ion implantation; semiconductor superlattices; silicon; 0.5 to 20 keV; 100 nm; 1050 C; Si:B; boron doping-superlattice; boron-enhanced-diffusion; interstitials; ion implantation; transient enhanced diffusion; ultra-shallow junction; Atomic layer deposition; Boron; DSL; Epitaxial growth; Implants; Jacobian matrices; Laboratories; Molecular beam epitaxial growth; Simulated annealing; Superlattices;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650425
