Title :
Very High Performance GaAs Microwave Mesfet Power Devices
Author :
Donzelli, G.P. ; Angione, C. ; Cipelletti, M. ; Mengoni, P. ; Bastida, E.M.
Author_Institution :
TELETTRA S.P.A. Vimercate, Milan (ITALY)
Abstract :
A new power FET topology is described which permits exceptional microwave performance and manufacturing characteristics. As an example of pratical device use, the performances of a class A-B 11 GHz, 1 W hybrid amplifier with 40% power added efficiency is reported.
Keywords :
Circuit topology; Cutoff frequency; FETs; Fingers; Gallium arsenide; Geometry; MESFETs; Metallization; Microwave devices; VHF circuits;
Conference_Titel :
Microwave Conference, 1987. 17th European
Conference_Location :
Rome, Italy
DOI :
10.1109/EUMA.1987.333717
