DocumentCode :
1995304
Title :
General EOS/ESD equation
Author :
Smith, Jack S.
Author_Institution :
Lockheed Martin Advanced Technology Center
fYear :
1997
fDate :
25-25 Sept. 1997
Firstpage :
59
Lastpage :
67
Abstract :
It is proposed the general EOS/ESD equation is nothing more than the heat equation driven by electrical power. Further that virtually all EOS/ESD failures are rooted in the thermal process. Support is given for the three materials; metals, semiconductors and particularly insulators. We compare the failure of an earthen dam to that of dielectric breakdown and show the remarkable similarity in behavior. A consequence of the General equation is that latency is not a legitimate consideration.
Keywords :
Conducting materials; Current density; Electrostatic discharge; Equations; Lifting equipment; Resistance heating; Semiconductor materials; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-878303-69-4
Type :
conf
DOI :
10.1109/EOSESD.1997.634226
Filename :
634226
Link To Document :
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