DocumentCode
1995366
Title
Non-volatile Memory Devices Based on Chalcogenide Materials
Author
Wang, Fei ; Wu, Xiaolong
Author_Institution
Electr. Eng. Dept., California State Univ., Long Beach, CA
fYear
2009
fDate
27-29 April 2009
Firstpage
5
Lastpage
9
Abstract
Chalcogenides based non-volatile memory is a promising type of non-volatile memory that display several advantages over the currently wide spread flash memory. This paper reviews the theory, fabrication and operation of two types of chalcogenide based non-volatile memories, i.e. phase change memory (PCM) and programmable metallization cell (PMC).
Keywords
flash memories; phase change memories; chalcogenide materials; flash memory; nonvolatile memory devices; phase change memory; programmable metallization cell; Computer displays; Crystalline materials; Flash memory; Glass; Material storage; Nonvolatile memory; Optical materials; Phase change materials; Random access memory; Temperature; Chalcogenide glasses; Devices; Non-volatile memory; Phase change;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Technology: New Generations, 2009. ITNG '09. Sixth International Conference on
Conference_Location
Las Vegas, NV
Print_ISBN
978-1-4244-3770-2
Electronic_ISBN
978-0-7695-3596-8
Type
conf
DOI
10.1109/ITNG.2009.65
Filename
5070583
Link To Document