Title :
Non-volatile Memory Devices Based on Chalcogenide Materials
Author :
Wang, Fei ; Wu, Xiaolong
Author_Institution :
Electr. Eng. Dept., California State Univ., Long Beach, CA
Abstract :
Chalcogenides based non-volatile memory is a promising type of non-volatile memory that display several advantages over the currently wide spread flash memory. This paper reviews the theory, fabrication and operation of two types of chalcogenide based non-volatile memories, i.e. phase change memory (PCM) and programmable metallization cell (PMC).
Keywords :
flash memories; phase change memories; chalcogenide materials; flash memory; nonvolatile memory devices; phase change memory; programmable metallization cell; Computer displays; Crystalline materials; Flash memory; Glass; Material storage; Nonvolatile memory; Optical materials; Phase change materials; Random access memory; Temperature; Chalcogenide glasses; Devices; Non-volatile memory; Phase change;
Conference_Titel :
Information Technology: New Generations, 2009. ITNG '09. Sixth International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-3770-2
Electronic_ISBN :
978-0-7695-3596-8
DOI :
10.1109/ITNG.2009.65
