DocumentCode
1995605
Title
"Design and Technology" Optimisation for High Yield Monolithic GaAs X Band Low Noise Amplifiers
Author
Mayousse, C. ; Renvoise, M. ; Michel, J. ; Siret, F. ; Syries, L.
Author_Institution
RTC Limeil, 3, Avenue Descartes - 94451 LIMEIL-BREVANNES - FRANCE
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
267
Lastpage
272
Abstract
The purpose of this study is to demonstrate how an improved GaAs design technique associated with an optimised technology, can fulfill the low-cost, high yield objectives required for the industrial exploitation of MMIC´s. Two reproductible 3s stage amplifiers realized in two different frequency bands provide respectively a noise figure of 2.8 dB with an associated gain of 21 dB at 12 GHz and 3 dB noise figure with 24 dB gain at 9 GHz. The overall chip sizes are less than 2 mm2.
Keywords
Circuits; Design optimization; FETs; Frequency; Gallium arsenide; Low-noise amplifiers; Metallization; Noise figure; Optical amplifiers; Roentgenium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333723
Filename
4132354
Link To Document