DocumentCode
1995775
Title
2 Watt X-ku band Quasi-MMIC transistor amplifier
Author
Kistchinsky, A. ; Radchenko, A.
Author_Institution
Microwave Syst. JSC, Moscow, Russia
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
53
Lastpage
54
Abstract
The results of a development and an experimental investigation of (8...18) GHz range of Q-MMIC transistor amplifier with output power 2 Watt at 1 dB gain compression are presented. The experimental characteristics, design features and assembly technology of the manufactured amplifiers are discussed.
Keywords
MMIC amplifiers; integrated circuit design; microwave transistors; assembly technology; frequency 8 GHz to 18 GHz; gain 1 dB; gain compression; ku band quasiMMIC transistor amplifier; power 2 W; Ambient intelligence; Gallium arsenide; Helium; IEEE catalog; LAN interconnection; Message-oriented middleware; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5293227
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