DocumentCode :
1995958
Title :
Reduction Of Auger Recombination Current In Strained InGaAs/InGaAsP Ouanturn Well Diode Lasers
Author :
Li, Wenyuan ; Yamanaka, T. ; Yoshikuni, Y. ; Yokoyama, K. ; Seki, S.
Author_Institution :
NTT Opto-electronics Laboratories
fYear :
1992
fDate :
16-19 Nov 1992
Firstpage :
34
Lastpage :
35
Keywords :
Capacitive sensors; Charge carrier density; Diode lasers; Indium gallium arsenide; Quantum well lasers; Radiative recombination; Semiconductor diodes; Semiconductor lasers; Spontaneous emission; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '92, Conference Proceedings. IEEE Lasers and Electro-Optics Society, 1992 Annual Meeting
Print_ISBN :
0-7803-0526-4
Type :
conf
DOI :
10.1109/LEOS.1992.693830
Filename :
693830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1995958
بازگشت