DocumentCode
1996227
Title
Low-Noise HEMT by MOCVD for Satellite Reception
Author
Tanaka, K. ; Suzuki, H. ; Togashi, K. ; Takakuwa, H. ; Tsurumaru, S. ; Kato, Y.
Author_Institution
Sony Corporation, Semiconductor Group, 4-14-1, Asahicho, Atsugi-shi, Kanagawa-ken 243, JAPAN
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
472
Lastpage
477
Abstract
Low-noise AlGaAs/GaAs HEMTs for microwave applications have been developed using MOCVD (Metal Organic Chemical Vapor Deposition). The HEMTs described in this paper, having gate lengths of 0.5 microns and gate widths of 200 and 300 microns, have displayed low noise figure, high reliability and high producibility. The average noise figure of the devices fabricated on a 2-inch wafer is typically 1.0dB, with a deviation of less than 0.1dB within a wafer and wafer-to-wafer. A Ku-band downconverter for the ECS band (10.95GHz to 11.7GHz) was built using 300-micron wide HEMTs in the 2-stage RF amplifier, and an average noise figure of 1.5dB was obtained.
Keywords
Chemical technology; Gallium arsenide; HEMTs; Heterojunctions; MOCVD; MODFETs; Molecular beam epitaxial growth; Noise figure; Radiofrequency amplifiers; Satellites;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333780
Filename
4132387
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