DocumentCode
1996489
Title
Time-dependency of the threshold voltage in memristive devices
Author
Lehtonen, Eero ; Poikonen, Jussi ; Laiho, Mika ; Lu, Wei
Author_Institution
Microelectron. Lab., Univ. of Turku, Turku, Finland
fYear
2011
fDate
15-18 May 2011
Firstpage
2245
Lastpage
2248
Abstract
We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of operation and threshold voltage is derived. Furthermore, self-terminating programming is considered using the results of this analysis. Finally, the effect of parameter variations on the threshold voltage is analyzed.
Keywords
memristors; thin film resistors; generic exponential model; self-terminating programming; thin-film memristive devices; threshold voltage time-dependency; Mathematical model; Memristors; Nanoscale devices; Programming; Resistance; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location
Rio de Janeiro
ISSN
0271-4302
Print_ISBN
978-1-4244-9473-6
Electronic_ISBN
0271-4302
Type
conf
DOI
10.1109/ISCAS.2011.5938048
Filename
5938048
Link To Document