Title :
Experiments and modeling of boron segregation in As implanted Si during annealing
Author :
Chang, R.D. ; Choi, P.S. ; Wristers, D. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Boron segregation toward implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It is found that both implantation damage and arsenic deactivation enhance the diffusion of the embedded boron layer toward the As implanted profile. The boron segregation is caused by the electric field resulting from the formation of p-n junction. The location of boron segregation peak depends on annealing temperature and As profiles. 2-D simulation shows device degradation due to boron segregation caused by As deactivation.
Keywords :
annealing; arsenic; boron; diffusion; doping profiles; elemental semiconductors; ion implantation; p-n junctions; segregation; silicon; 2D simulation; As implanted Si; Si:As,B; annealing; arsenic deactivation; boron segregation; damage; device degradation; diffusion; dopant profile; electric field; embedded layer; p-n junction; Boron; Degradation; Doping profiles; Furnaces; Implants; Microelectronics; P-n junctions; Rapid thermal annealing; Simulated annealing; Temperature dependence;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650432
