Title :
A new clustering model for runaway boron pile-up effect
Author_Institution :
Motorola Moscow Res. Lab., Russia
Abstract :
A novel clustering model is proposed to explain the anomalous boron pile-up effect during an RTP anneal. The model assumes that the clustering rate depends on local total concentration causing accelerated clustering at high doping levels. At lower concentrations the model reproduces conventional clustering models.
Keywords :
boron; elemental semiconductors; ion implantation; rapid thermal annealing; silicon; RTP annealing; Si:B; clustering model; doping; runaway boron pile-up effect; Acceleration; Annealing; Boron; Doping; Implants; Laboratories; Physics; Semiconductor process modeling; Shape; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650434