DocumentCode :
1997093
Title :
A new clustering model for runaway boron pile-up effect
Author :
Orlowski, M.
Author_Institution :
Motorola Moscow Res. Lab., Russia
fYear :
1997
fDate :
10-10 Dec. 1997
Firstpage :
505
Lastpage :
508
Abstract :
A novel clustering model is proposed to explain the anomalous boron pile-up effect during an RTP anneal. The model assumes that the clustering rate depends on local total concentration causing accelerated clustering at high doping levels. At lower concentrations the model reproduces conventional clustering models.
Keywords :
boron; elemental semiconductors; ion implantation; rapid thermal annealing; silicon; RTP annealing; Si:B; clustering model; doping; runaway boron pile-up effect; Acceleration; Annealing; Boron; Doping; Implants; Laboratories; Physics; Semiconductor process modeling; Shape; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4100-7
Type :
conf
DOI :
10.1109/IEDM.1997.650434
Filename :
650434
Link To Document :
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