DocumentCode
1997280
Title
Uncooled InGaAlAs MQW lasers for datacom applications grown by MOVPE
Author
Tsuchiya, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We have fabricated ridge-stripe InGaAlAs MQW lasers with demonstrated excellent lasing characteristics: low threshold current (6.5 mA at 25/spl deg/C and 13 mA at 85/spl deg/C), high characteristic temperature (91 K), 10-Gbit/s direct modulation at 85/spl deg/C, and good reliability.
Keywords
Debye temperature; III-V semiconductors; MOCVD; aluminium compounds; data communication; gallium arsenide; indium compounds; laser reliability; optical transmitters; quantum well lasers; ridge waveguides; semiconductor device reliability; vapour phase epitaxial growth; waveguide lasers; 10 Gbit/s; 13 mA; 25 C; 6.5 mA; 85 C; 91 K; InGaAlAs; MOVPE grown; datacom applications; direct modulation; good reliability; high characteristic temperature; lasing characteristics; low threshold current; ridge-stripe InGaAlAs MQW lasers; uncooled InGaAlAs MQW lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Indium phosphide; Laser applications; Laser feedback; Quantum well devices; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970800
Filename
970800
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