Title :
Simulation of transient enhanced diffusion using computationally efficient models
Author :
Yu, S.S. ; Kennel, H.W. ; Giles, M.D. ; Packan, P.A.
Author_Institution :
Technol. CAD, Intel Corp., Hillsboro, OR, USA
Abstract :
We present a computationally efficient model for TED based on scalar ´damage´ dose quantities which are created by implantation and removed during annealing. Spatial effects, extended defects, and effects of damage on dopant solubility are included. This approach is able to reproduce a wide range of conditions relevant to advanced submicron technologies accurately and efficiently.
Keywords :
diffusion; annealing; computationally efficient model; damage; dopant solubility; extended defects; ion implantation; scalar damage dose; simulation; spatial effects; submicron technology; transient enhanced diffusion; Annealing; Boron; Computational modeling; Equations; Implants; Ion implantation; Semiconductor process modeling; Silicon; Temperature dependence; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650435
