• DocumentCode
    1997537
  • Title

    0.8 to 18.0 GHz Hybrid Distributed Amplifiers using 0.25 Ã\x97 200 pm MESFET and HEMT

  • Author

    Ito, Yasushi

  • Author_Institution
    Tokyo Keiki Co., Ltd., Aero and Defense Systems Division, 2-16 Minamikamata, Ohta-ku, Tokyo 144, Japan
  • fYear
    1987
  • fDate
    7-11 Sept. 1987
  • Firstpage
    832
  • Lastpage
    837
  • Abstract
    0.8 to 18.0 GHz hybrid distributed amplifiers have been realized using 2 FETs with 0.25 × 200 micron gate. One amplifier, using two 0.25 × 200 micron MESFETs, exhibits 5.0 ± 0.3 dB of gain, less than 6.2 dB of noise figure. The other amplifier, using two 0.25 × 200 micron HEMTs, exhibits 7.0 ± 0.5 dB of gain, less than 5.4 dB of noise figure. These are the first distributed amplifiers ever reported to cover such a wide bandwidth and exhibit high RF performance using only 2 FETs.
  • Keywords
    Bonding; Cutoff frequency; Distributed amplifiers; FETs; Gain; Geometry; HEMTs; MESFETs; Noise figure; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1987. 17th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1987.333737
  • Filename
    4132443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1997537