Title :
A high stability, low supply voltage and low standby power six-transistor CMOS SRAM
Author :
Kobayashi, Nobuaki ; Ito, Ryusuke ; Enomoto, Tadayoshi
Author_Institution :
Chuo Univ., Tokyo, Japan
Abstract :
The SVL circuit not only improve “read” and “write” characteristics of SRAMs, but also reduce the stand-by powers of the SRAMs. Therefore, SRAMs incorporating SVL circuits are very useful for use in low supply voltage, battery-driven portable systems.
Keywords :
SRAM chips; adaptive control; self-adjusting systems; CMOS SRAM; SVL circuit; self-controllable voltage level; standby power six-transistor; static random access memories; Arrays; Circuit stability; Leakage currents; MOSFET; Random access memory; Threshold voltage; Voltage measurement;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2015 20th Asia and South Pacific
Conference_Location :
Chiba
Print_ISBN :
978-1-4799-7790-1
DOI :
10.1109/ASPDAC.2015.7058921
