DocumentCode :
1998215
Title :
Temperature and hump effect impact on output voltage spread of low power bandgap designed in the sub-threshold area
Author :
Joly, Y. ; Truphemus, L. ; Lopez, L. ; Portal, J.-M. ; Aziza, H. ; Mien, F. ; Fornara, P.
Author_Institution :
STMicroelectron., Rousset, France
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
2549
Lastpage :
2552
Abstract :
Analog circuit designs are often biased to work in sub-threshold mode for low power constraints and for better gate-source voltage matching performances. Depending on process, hump effect may change MOS characteristics for negative Bulk-Source Voltage (VBS) and have a slight impact for VBS=0V. Actually, even without body effect, hump mainly degrades MOS matching performances in the sub-threshold area with significant temperature dependence. Thus, in order to accurately simulate bandgap performances, modeling of hump effect has to be considered.
Keywords :
MIS devices; analogue circuits; energy gap; low-power electronics; MOS characteristics; analog circuit designs; gate-source voltage matching; hump effect impact; low power bandgap; negative bulk-source voltage; output voltage spread; sub-threshold area mode; temperature dependence; voltage 0 V; Data models; Integrated circuit modeling; Logic gates; Photonic band gap; Silicon; Solid modeling; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5938124
Filename :
5938124
Link To Document :
بازگشت