DocumentCode
1998292
Title
Advances in amorphous silicon technology for LCDs
Author
Tsukada, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
531
Lastpage
534
Abstract
Recent progress in amorphous silicon TFT LCDs is reviewed. Both the screen diagonals and pixel counts of TFT LCDs have increased over the past few years. In this period, remarkable progress has also been achieved in the viewing-angle characteristics. In this paper, the key issue of the next-generation TFT LCD panels is shown to be the aperture ratio. This is discussed from the viewpoint of the design rule reduction and the development of the scaling law.
Keywords
amorphous semiconductors; elemental semiconductors; flat panel displays; liquid crystal displays; silicon; thin film transistors; LCDs; Si; TFT; aperture ratio; design rule reduction; pixel counts; scaling law; screen diagonals; viewing-angle characteristics; Amorphous silicon; Apertures; Brightness; Chromium; Eyes; Information technology; Laboratories; Liquid crystal displays; Production; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650440
Filename
650440
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