Title :
A low-power low-IF DDPSK receiver in 0.35-μm SOI CMOS technology
Author :
Zencir, E. ; Yuce, M.R. ; Huang, T. ; Marks, J. ; Dogan, N.S. ; Liu, W. ; Arvas, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
A low-power low-IF double differential PSK receiver is implemented in a 0.35-μm silicon on insulator (SOI) CMOS technology. Low-power front-end allows the implementation of the receiver with minimal power consumption. The receiver operates at 435 MHz RF. RF front-end and baseband measurements show that a fully-integrated low-power low-IF receiver that tolerates large Doppler shift is feasible.
Keywords :
CMOS integrated circuits; Doppler shift; differential phase shift keying; power consumption; radio receivers; silicon-on-insulator; 0.35 micron; 435 MHz; CMOS technology; RF front-end; baseband measurements; double differential PSK receiver; fully-integrated low-power low-IF receiver; large Doppler shift; low-power front-end; minimal power consumption; silicon on insulator; Baseband; CMOS technology; Decoding; Doppler shift; Frequency conversion; Mars; Phase shift keying; Power dissipation; Radio frequency; Silicon on insulator technology;
Conference_Titel :
Radio and Wireless Conference, 2003. RAWCON '03. Proceedings
Print_ISBN :
0-7803-7829-6
DOI :
10.1109/RAWCON.2003.1227916
