Title :
Dual material gate field effect transistor (DMGFET)
Author :
Wei Long ; Chin, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.
Keywords :
field effect transistors; work function; DMGFET; HFET; MESFET; MOSFET; charge carrier acceleration; dual material gate FET; field effect transistor; gate structure; laterally contacting materials; material work function difference; screening effect; short channel effects suppression; threshold voltage; work functions; Analog integrated circuits; Charge carriers; Digital integrated circuits; FET integrated circuits; HEMTs; High speed integrated circuits; MESFET integrated circuits; MODFETs; MOSFET circuits; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650445
