Title :
Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters
Author :
Filsecker, Felipe ; Alvarez, Rodrigo ; Bernet, Steffen
Author_Institution :
Power Electron., Tech. Univ. Dresden, Dresden, Germany
Abstract :
This paper presents a characterization of a new SiC PIN diode module for use in medium voltage converters. It has a rating of 6.5 kV and 1000 A, comparable to Si diodes available nowadays. The static behavior, switching waveforms and losses for the new diode are analyzed. The tests were carried out for currents between 50 and 1000 A. Different dc link voltages (2.4, 3.0 and 3.6 kV), junction temperatures (from -25 to 125°C) and di/dt values (0.9-2.2 kA/μs at 1 kA) were considered for the analysis. The effects and interactions of the different parameters in the device behavior are discussed.
Keywords :
p-i-n diodes; power convertors; power semiconductor diodes; PIN diode module; current 50 A to 1000 A; dc link voltages; junction temperatures; medium voltage converters; temperature -25 degC to 125 degC; voltage 6.5 kV; Insulated gate bipolar transistors; Junctions; Semiconductor diodes; Silicon carbide; Switches; Temperature measurement; Voltage measurement;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2012 IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4673-0802-1
Electronic_ISBN :
978-1-4673-0801-4
DOI :
10.1109/ECCE.2012.6342434
