• DocumentCode
    1999523
  • Title

    Planar W--Band Receiver and Oscillator

  • Author

    Buechler, J. ; Kasper, E. ; Luy, J.F. ; Russer, P. ; Strohm, K.M.

  • Author_Institution
    Lehrstuhl fÿr Hochfrequenztechnik, Technische Universitÿt Mÿnchen, Arcisstr. 21, D-8000 Mÿnchen 2, FRG
  • fYear
    1988
  • fDate
    12-15 Sept. 1988
  • Firstpage
    364
  • Lastpage
    369
  • Abstract
    A planar oscillator integrated on silicon substrate with a double drift region IMP ATT diode and a monolithic integrated Schottky diode receiver including a planar antenna on one silicon chip for the 90 GHz band are presented. The maximum CW output power of the oscillator is 200 mW at 73 GHz with an efficiency of 4.5 %. The experimental receiver sensitivity is 65 μV/μWcm-2, the receiver antenna half--power beamwidth is 23°.
  • Keywords
    Capacitance; Circuits; Geometry; Microstrip; Millimeter wave technology; Molecular beam epitaxial growth; Oscillators; Schottky diodes; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1988. 18th European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • DOI
    10.1109/EUMA.1988.333841
  • Filename
    4132529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1999523