Title :
Planar W--Band Receiver and Oscillator
Author :
Buechler, J. ; Kasper, E. ; Luy, J.F. ; Russer, P. ; Strohm, K.M.
Author_Institution :
Lehrstuhl fÿr Hochfrequenztechnik, Technische Universitÿt Mÿnchen, Arcisstr. 21, D-8000 Mÿnchen 2, FRG
Abstract :
A planar oscillator integrated on silicon substrate with a double drift region IMP ATT diode and a monolithic integrated Schottky diode receiver including a planar antenna on one silicon chip for the 90 GHz band are presented. The maximum CW output power of the oscillator is 200 mW at 73 GHz with an efficiency of 4.5 %. The experimental receiver sensitivity is 65 μV/μWcm-2, the receiver antenna half--power beamwidth is 23°.
Keywords :
Capacitance; Circuits; Geometry; Microstrip; Millimeter wave technology; Molecular beam epitaxial growth; Oscillators; Schottky diodes; Silicon; Substrates;
Conference_Titel :
Microwave Conference, 1988. 18th European
Conference_Location :
Stockholm, Sweden
DOI :
10.1109/EUMA.1988.333841
