DocumentCode
1999534
Title
A high stability electrode technology for stacked SrBi/sub 2/Ta/sub 2/O/sub 9/ capacitors applicable to advanced ferroelectric memory
Author
Kudo, J. ; Ito, Y. ; Mitarai, S. ; Ogata, N. ; Yamazaki, S. ; Urashima, H. ; Okutoh, A. ; Nagata, M. ; Ishihara, K.
Author_Institution
Functional Devices Labs., Sharp Corp., Tenri, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
609
Lastpage
612
Abstract
A novel high stability electrode technology with TaSiN as a key ingredient is proposed. Combining it with the reduced pressure annealing for low temperature formation of the SBT film, fabrication of the stacked SBT capacitor on poly Si plug was demonstrated for the first time.
Keywords
annealing; bismuth compounds; electrodes; ferroelectric capacitors; ferroelectric storage; strontium compounds; SBT film; SrBi/sub 2/Ta/sub 2/O/sub 9/; TaSiN; fabrication; ferroelectric memory; high stability electrode technology; low temperature formation; poly Si plug; reduced pressure annealing; stacked SrBi/sub 2/Ta/sub 2/O/sub 9/ capacitor; Annealing; Capacitors; Conductivity; Electrodes; Ferroelectric materials; Plugs; Semiconductor films; Stability; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650458
Filename
650458
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