Title :
A high stability electrode technology for stacked SrBi/sub 2/Ta/sub 2/O/sub 9/ capacitors applicable to advanced ferroelectric memory
Author :
Kudo, J. ; Ito, Y. ; Mitarai, S. ; Ogata, N. ; Yamazaki, S. ; Urashima, H. ; Okutoh, A. ; Nagata, M. ; Ishihara, K.
Author_Institution :
Functional Devices Labs., Sharp Corp., Tenri, Japan
Abstract :
A novel high stability electrode technology with TaSiN as a key ingredient is proposed. Combining it with the reduced pressure annealing for low temperature formation of the SBT film, fabrication of the stacked SBT capacitor on poly Si plug was demonstrated for the first time.
Keywords :
annealing; bismuth compounds; electrodes; ferroelectric capacitors; ferroelectric storage; strontium compounds; SBT film; SrBi/sub 2/Ta/sub 2/O/sub 9/; TaSiN; fabrication; ferroelectric memory; high stability electrode technology; low temperature formation; poly Si plug; reduced pressure annealing; stacked SrBi/sub 2/Ta/sub 2/O/sub 9/ capacitor; Annealing; Capacitors; Conductivity; Electrodes; Ferroelectric materials; Plugs; Semiconductor films; Stability; Temperature; Tin;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650458
