Silicon Monolithic Millimeter Wave Impatt Oscillators

The good efficiency of silicon IMPATT diodes in the upper frequency range and the relatively high thermal conductivity of silicon lead to the concept of a monolithically integrated coplanar IMPATT oscillator. This concept is realized in a prototype for W-band frequencies in CW operation. First measurements indicate oscillations at a frequency of 76 GHz with a continuous wave output power of about 1 mW.