Title :
Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetration
Author :
Aoyama, T. ; Suzuki, K. ; Tashiro, H. ; Tada, Y. ; Arimoto, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We found that the annealing time dependence of the flat-band voltage (V/sub FB/) shift of a p/sup +/-polysilicon gate MOS diode is attributed to the activation of boron in the polysilicon instead of the boron penetration through the gate SiO/sub 2/. We identified the process window for p/sup +/-polysilicon gate pMOSFETs taking into account that boron is sufficiently activated in polysilicon without penetrating through the gate SiO/sub 2/.
Keywords :
MOSFET; annealing; carrier mobility; elemental semiconductors; semiconductor device reliability; silicon; Si-SiO/sub 2/; annealing time dependence; carrier activation; flat-band voltage shifts; p-MOS devices; polysilicon gate MOS diode; process window; Annealing; Boron; Channel bank filters; Conductivity; Diodes; Electrical resistance measurement; Ion implantation; MOSFETs; Virtual manufacturing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650462
