Title :
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors
Author :
Tuinhout, H.P. ; Montree, A.H. ; Schmitz, J. ; Stolk, P.A.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.
Keywords :
silicon; MOSFET matching measurements; boron penetration; deep submicron CMOS transistors; gate depletion; polysilicon grain size distribution; transistor matching performance; Boron; CMOS process; CMOS technology; Degradation; Grain size; Implants; MOSFETs; Signal processing; Stochastic processes; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650463
