DocumentCode
1999828
Title
A new synthesis methodology for reliable RF front-end Design
Author
Ferreira, Pietro M. ; Petit, Hervé ; Naviner, Jean-François
fYear
2011
fDate
15-18 May 2011
Firstpage
2926
Lastpage
2929
Abstract
A low power and low cost WLAN/WiMAX RF front- end requires more advanced CMOS technologies whose transistor parameters degradation is becoming worse. Few published works has presented the reliability results for RF circuits. In order to fill this gap, we develop a new synthesis methodology for reliable RF front-end design using the design example of a reliable BLIXER. The first steps of our synthesis methodology is a transistor ageing simulation. Then, we calculate an estimation of the circuit performance and ageing using the circuit design equations and the total derivatives. Thus, we can find the required bias and sizing improving the circuit reliability. The simulation results of the typical circuit are coherent with the WLAN/WiMAX RF front-end specifications. Despite the integrated process variability and mismatch, we observe that 96.4 % of the simulation runs have Gain >; 10.0 dB, and 92.1% of the simulation runs have NFmax <; 5.0 dB. Moreover, the BLIXER ageing degradation is negligible according to the fitted Poisson distribution of the power consumption for 99.9% of confidence. Going further, we can say that the synthesis methodology proposed and developed for a RF front-end design can be exploited in different AMS/RF circuits and also generalized for a single bottom- up reliable-system design approach.
Keywords
CMOS integrated circuits; MOSFET; Poisson distribution; WiMax; integrated circuit design; integrated circuit reliability; low-power electronics; semiconductor process modelling; wireless LAN; AMS-RF circuit; BLIXER ageing degradation; CMOS technology; RF circuit reliability; WLAN-WiMAX RF front-end design; circuit design equation; fitted Poisson distribution; integrated process mismatch; integrated process variability; power consumption; single bottom-up reliable-system design approach; transistor ageing simulation; transistor parameter degradation; Aging; Degradation; Integrated circuit reliability; Mathematical model; Radio frequency; Reliability engineering; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location
Rio de Janeiro
ISSN
0271-4302
Print_ISBN
978-1-4244-9473-6
Electronic_ISBN
0271-4302
Type
conf
DOI
10.1109/ISCAS.2011.5938204
Filename
5938204
Link To Document