• DocumentCode
    1999828
  • Title

    A new synthesis methodology for reliable RF front-end Design

  • Author

    Ferreira, Pietro M. ; Petit, Hervé ; Naviner, Jean-François

  • fYear
    2011
  • fDate
    15-18 May 2011
  • Firstpage
    2926
  • Lastpage
    2929
  • Abstract
    A low power and low cost WLAN/WiMAX RF front- end requires more advanced CMOS technologies whose transistor parameters degradation is becoming worse. Few published works has presented the reliability results for RF circuits. In order to fill this gap, we develop a new synthesis methodology for reliable RF front-end design using the design example of a reliable BLIXER. The first steps of our synthesis methodology is a transistor ageing simulation. Then, we calculate an estimation of the circuit performance and ageing using the circuit design equations and the total derivatives. Thus, we can find the required bias and sizing improving the circuit reliability. The simulation results of the typical circuit are coherent with the WLAN/WiMAX RF front-end specifications. Despite the integrated process variability and mismatch, we observe that 96.4 % of the simulation runs have Gain >; 10.0 dB, and 92.1% of the simulation runs have NFmax <; 5.0 dB. Moreover, the BLIXER ageing degradation is negligible according to the fitted Poisson distribution of the power consumption for 99.9% of confidence. Going further, we can say that the synthesis methodology proposed and developed for a RF front-end design can be exploited in different AMS/RF circuits and also generalized for a single bottom- up reliable-system design approach.
  • Keywords
    CMOS integrated circuits; MOSFET; Poisson distribution; WiMax; integrated circuit design; integrated circuit reliability; low-power electronics; semiconductor process modelling; wireless LAN; AMS-RF circuit; BLIXER ageing degradation; CMOS technology; RF circuit reliability; WLAN-WiMAX RF front-end design; circuit design equation; fitted Poisson distribution; integrated process mismatch; integrated process variability; power consumption; single bottom-up reliable-system design approach; transistor ageing simulation; transistor parameter degradation; Aging; Degradation; Integrated circuit reliability; Mathematical model; Radio frequency; Reliability engineering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4244-9473-6
  • Electronic_ISBN
    0271-4302
  • Type

    conf

  • DOI
    10.1109/ISCAS.2011.5938204
  • Filename
    5938204