DocumentCode :
1999841
Title :
Comparison of crosstalk delay between single and bundled SWNT for global VLSI interconnects
Author :
Majumder, Manoj Kumar ; Pandya, Nisarg D. ; Kaushik, B.K. ; Manhas, S.K.
Author_Institution :
Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
fYear :
2012
fDate :
15-17 March 2012
Firstpage :
564
Lastpage :
569
Abstract :
Carbon nanotubes (CNTs) have been proved as an emerging interconnect material for future nano and deep submicron level technologies. CNTs are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, single-wall CNT (SWNT)-based interconnects are modeled and the effects of crosstalk are evaluated. On comparing the crosstalk effects for different models of single SWNT and bundled SWNT, it is observed that crosstalk delay is significantly reduced for SWNT bundles at global level of interconnects. Irrespective of the types of SWNTs, crosstalk delay is extensively affected by transition time, diameter of SWNTs and spacing between two lines (aggressor and victim).
Keywords :
VLSI; carbon nanotubes; crosstalk; integrated circuit interconnections; nanoelectronics; bundled SWNT diameter; carbon nanotube; crosstalk delay comparison; deep submicron level technology; electromigration; global VLSI interconnect; interconnecting material; nanomicron level technology; single SWNT diameter; single-wall CNT-based interconnect; transition time; Crosstalk; Delay; Inductance; Integrated circuit interconnections; Quantum capacitance; Resistance; Carbon nanotube; SWNT; VLSI; aggressor and victim; crosstalk; nanotechnology; transition time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Recent Advances in Information Technology (RAIT), 2012 1st International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4577-0694-3
Type :
conf
DOI :
10.1109/RAIT.2012.6194590
Filename :
6194590
Link To Document :
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