Title :
A highly manufacturable corner rounding solution for 0.18 /spl mu/m shallow trench isolation
Author :
Chang, C.P. ; Pai, C.S. ; Baumann, F.H. ; Liu, C.T. ; Rafferty, C.S. ; Pinto, M.R. ; Lloyd, E.J. ; Bude, M. ; Klemens, F.P. ; Miner, J.F. ; Cheung, K.P. ; Colonell, J.I. ; Lai, W.Y.C. ; Vaidya, H. ; Hillenius, S.J. ; Liu, R.C. ; Clemens, J.T.
Author_Institution :
Lucent Technols., Bell Labs., Murray Hill, NJ, USA
Abstract :
In this work, we first establish the relationship between corner leakage and corner rounding through device simulation. Then, we demonstrate a novel method to produce corner rounding, using a post-CMP, high temperature re-oxidation process (HTR-STI). A semi-empirical model correlating rounding with re-oxidation and nitride mask thickness is derived from mechanical studies. Finally, we show the electrical properties of devices with HTR-STI for the 0.18 /spl mu/m technology.
Keywords :
isolation technology; oxidation; semiconductor process modelling; 0.18 micron; CMP; HTR-STI; corner leakage; corner rounding; device simulation; electrical properties; high temperature re-oxidation; manufacturing; mechanical properties; nitride mask thickness; semi-empirical model; shallow trench isolation; Controllability; Degradation; Etching; Hafnium; Isolation technology; Lead compounds; Manufacturing; Oxidation; Process control; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650470
