A highly manufacturable corner rounding solution for 0.18 /spl mu/m shallow trench isolation

Author

Chang, C.P. ; Pai, C.S. ; Baumann, F.H. ; Liu, C.T. ; Rafferty, C.S. ; Pinto, M.R. ; Lloyd, E.J. ; Bude, M. ; Klemens, F.P. ; Miner, J.F. ; Cheung, K.P. ; Colonell, J.I. ; Lai, W.Y.C. ; Vaidya, H. ; Hillenius, S.J. ; Liu, R.C. ; Clemens, J.T.

Author_Institution

Lucent Technols., Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

661

Lastpage

664

Abstract

In this work, we first establish the relationship between corner leakage and corner rounding through device simulation. Then, we demonstrate a novel method to produce corner rounding, using a post-CMP, high temperature re-oxidation process (HTR-STI). A semi-empirical model correlating rounding with re-oxidation and nitride mask thickness is derived from mechanical studies. Finally, we show the electrical properties of devices with HTR-STI for the 0.18 /spl mu/m technology.

Keywords

isolation technology; oxidation; semiconductor process modelling; 0.18 micron; CMP; HTR-STI; corner leakage; corner rounding; device simulation; electrical properties; high temperature re-oxidation; manufacturing; mechanical properties; nitride mask thickness; semi-empirical model; shallow trench isolation; Controllability; Degradation; Etching; Hafnium; Isolation technology; Lead compounds; Manufacturing; Oxidation; Process control; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650470

Filename

650470