Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region

We present a new, comprehensive technique for the extraction of two-dimensional (2D) doping profiles in sub-micron MOS transistors using I-V characteristics in the subthreshold region. The main advantages of this technique include: (1) ability to extract 2D doping profiles of devices having very short channel lengths due to its immunity to parasitic capacitances and noise; (2) low sensitivity to gate area variations; (3) low dependence on mobility model; (4) non-destructive nature; (5) no special test structures neccessary; and (6) simplicity of data collection and preparation, as well as general ease of use.