DocumentCode :
2000095
Title :
On the use of n-well resistors for uniform triggering of ESD protection elements
Author :
Notermans, Guido
Author_Institution :
Philips Semiconductors
fYear :
1997
fDate :
25-25 Sept. 1997
Firstpage :
221
Lastpage :
229
Abstract :
N-well resistors are sometimes used to add series resistance to a grounded-gate NMOST protection device in order to ensure simultaneous triggering of multiple fingers. It turns out that such protections may fail far below their nominal ESD threshold depending on the particular layout. It is shown that n-well snapback plays a major role in the failure mechanism. Maximum ESD performance can be obtained by applying a simple design rule for the n-well geometry.
Keywords :
Breakdown voltage; Electrostatic discharge; Failure analysis; Fingers; Geometry; Leakage current; Protection; Resistors; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-878303-69-4
Type :
conf
DOI :
10.1109/EOSESD.1997.634246
Filename :
634246
Link To Document :
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