DocumentCode
2000192
Title
A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays
Author
Takemura, H. ; Tomihari, Y. ; Furutake, N. ; Matsuno, F. ; Yoshiki, M. ; Takada, N. ; Okamoto, A. ; Miyano, S.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
709
Lastpage
712
Abstract
We have developed highly reliable field emitter arrays with a novel vertical current limiter fabricated with a deep trench forming technology. The vertical current limiter has a local current-control function that automatically prevents fatal arc failure, and it has low resistance when used in the normal operation of a field emitter array. It has demonstrated a breakdown voltage as high as 120 V and a negligible increase in operation voltage, i.e., Vg of 70 V at 1 /spl mu/A/tip with an emitter cone density of more than 5/spl times/10/sup 7/ emitters/cm/sup 2/.
Keywords
arrays; current limiters; semiconductor device reliability; semiconductor technology; vacuum microelectronics; 120 V; 70 V; I-V characteristics; Si; Si substrate; VECTL design; breakdown voltage; deep trench forming technology; emitter cone density; highly reliable field emitter arrays; local current-control function; operation voltage; vertical current limiter fabrication; Current limiters; Displays; Etching; Fabrication; Field emitter arrays; Insulation; Resistors; Semiconductor films; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650481
Filename
650481
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