• DocumentCode
    2000192
  • Title

    A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays

  • Author

    Takemura, H. ; Tomihari, Y. ; Furutake, N. ; Matsuno, F. ; Yoshiki, M. ; Takada, N. ; Okamoto, A. ; Miyano, S.

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    709
  • Lastpage
    712
  • Abstract
    We have developed highly reliable field emitter arrays with a novel vertical current limiter fabricated with a deep trench forming technology. The vertical current limiter has a local current-control function that automatically prevents fatal arc failure, and it has low resistance when used in the normal operation of a field emitter array. It has demonstrated a breakdown voltage as high as 120 V and a negligible increase in operation voltage, i.e., Vg of 70 V at 1 /spl mu/A/tip with an emitter cone density of more than 5/spl times/10/sup 7/ emitters/cm/sup 2/.
  • Keywords
    arrays; current limiters; semiconductor device reliability; semiconductor technology; vacuum microelectronics; 120 V; 70 V; I-V characteristics; Si; Si substrate; VECTL design; breakdown voltage; deep trench forming technology; emitter cone density; highly reliable field emitter arrays; local current-control function; operation voltage; vertical current limiter fabrication; Current limiters; Displays; Etching; Fabrication; Field emitter arrays; Insulation; Resistors; Semiconductor films; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650481
  • Filename
    650481