Excimer laser annealing process for polysilicon TFT on glass and plastic substrates

Author

Liao, C.H. ; Wang, M.C. ; An Shih ; Si-Chen Lee

Author_Institution

Optoelectron. Mater. Ind. Res. Center, ChangGung Univ., Taoyuan, Taiwan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

High-mobility poly-Si TFTs fabricated in low temperature process are required for the next generation of active-matrix liquid-crystal displays (AMLCDs). The mobility of poly-Si TFT exceeds that of the conventional a-Si TFT active device by two orders of magnitude, permitting integration of peripheral devices circuits and increased aperture. With optimized excimer laser annealing process condition, we have successfully fabricated low temperature poly-Si TFT on glass and plastic substrates.

Keywords

excimer lasers; laser beam annealing; liquid crystal displays; optical fabrication; silicon; substrates; thin film transistors; Si; excimer laser annealing process; glass substrates; high-mobility poly-Si TFTs; increased aperture; low temperature process; next generation active-matrix liquid-crystal displays; optimized excimer laser annealing process; peripheral devices circuits; plastic substrates; polysilicon TFT; Active matrix liquid crystal displays; Annealing; Crystallization; Glass; Laser stability; Plastics; Power lasers; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970947

Filename

970947