Super high frequency width extensional aluminum nitride (AlN) MEMS resonators

Author

Wojciechowski, K.E. ; Olsson, R.H., III ; Nordquist, C.D. ; Tuck, M.R.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2009

fDate

20-23 Sept. 2009

Firstpage

1179

Lastpage

1182

Abstract

Width extensional (WE) super high frequency (SHF) aluminum nitride (AlN) resonators have been fabricated using optical lithography. Solidly anchored WE resonators were shown to be superior to beam anchored resonators of the same size and it was verified that simply scaling resonator area does not improve insertion loss (IL). Resonators with an IL of -6.3 dB into 50 ohms at 4.1 GHz and -7.2 dB at 6.8 GHz have been demonstrated. This type of performance at 6.8 GHz is unprecedented for contour mode resonators and represents a 12.6 dB improvement over recently reported SHF AlN resonators.

Keywords

aluminium compounds; micromechanical resonators; photolithography; piezoelectric devices; piezoelectric materials; ultrasonic devices; AlN; AlN MEMS resonators; MEMS resonator fabrication; aluminum nitride MEMS resonators; frequency 4.1 GHz; frequency 6.8 GHz; insertion loss improvement; loss 6.3 dB; loss 7.2 dB; optical lithography; resistance 50 ohm; solidly anchored width extensional resonators; super high frequency MEMS resonators; width extensional MEMS resonators; Acoustic beams; Aluminum nitride; Electrodes; Fingers; Frequency; Laboratories; Lithography; Micromechanical devices; Optical losses; Optical resonators; Aluminum Nitride; Microresonator; RF MEMS; SHF MEMS;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2009 IEEE International

Conference_Location

Rome

ISSN

1948-5719

Print_ISBN

978-1-4244-4389-5

Electronic_ISBN

1948-5719

Type

conf

DOI

10.1109/ULTSYM.2009.5441802

Filename

5441802