DocumentCode
2000264
Title
"D C TO 8 GHz GaAs Normally-Off Amplifiers"
Author
Arnaud, O. ; Bostelmann, M. ; Meignant, D. ; Minondo, P.
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
562
Lastpage
567
Abstract
We have developped a family of ultra wideband, low power, single supply GaAs normally-off amplifiers. These amplifiers are fabricated with the RTC Limeil digital enhancement mode FET technology. Input and output VSWR´s are lower than 2.0 over the entire frequency band. The typical noise figure is 6.2 dB and the single tone -1 dB gain compression is reached at 2 dBm of output power for a linear small signal gain of 8.5 dB. As an application example the combination of multistage amplifiers extends direct frequency counter sensitivities to below -40 dBm.
Keywords
Broadband amplifiers; FETs; Frequency; Gain; Gallium arsenide; Noise figure; Power amplifiers; Power generation; Power supplies; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333871
Filename
4132559
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