InGaP/GaAs HBT´s with high-speed and low-current operation fabricated using WSi/Ti as the base electrode and burying SiO/sub 2/ in the extrinsic collector

Author

Oka, T. ; Hirata, K. ; Ouchi, L.K. ; Uchiyama, H. ; Mochizuki, K. ; Nakamura, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

739

Lastpage

742

Abstract

We have developed high-performance InGaP/GaAs HBT´s capable of high-speed as well as low-current operation: an HBT with an emitter size S/sub E/ of 0.6/spl times/4.6 /spl mu/m exhibited f/sub T/ of 138 GHz and f/sub max/ of 275 GHz at I/sub c/ of 4 mA; and an HBT with S/sub E/ of 0.3/spl times/1.6 /spl mu/m exhibited f/sub T/ of 96 GHz and f/sub max/ of 197 GHz at I/sub c/ of 1 mA. These results are the best ever reported for GaAs-based HBT´s. This high performance is due to the simultaneous reduction of S/sub E/ and C/sub BC/ by using WSi/Ti as the base electrode and by burying SiO/sub 2/ in the extrinsic collector.

Keywords

III-V semiconductors; buried layers; capacitance; contact resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device metallisation; 1 to 4 mA; 96 to 275 GHz; InGaP-GaAs; InGaP/GaAs HBT; SiO/sub 2/; SiO/sub 2/ buried layer; WSi-Ti; WSi/Ti base electrode; extrinsic collector; high-speed operation; low-current operation; Contact resistance; Electrical resistance measurement; Electrodes; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Laboratories; Parasitic capacitance; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650488

Filename

650488