A 50 GHz feedback amplifier with AlInAs/GaInAs transferred-substrate HBT

Author

Agarwal, B. ; Hiensa, D. ; Lee, Q. ; Pullela, R. ; Guthrie, J. ; Samoska, L. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

743

Lastpage

746

Abstract

Transferred-substrate heterojunction bipolar transistors (HBTs) have very high f/sub max/ and are potential candidates for very high-speed integrated circuit applications. We report a wideband amplifier with AlInAs/GaInAs transferred-substrate HBTs. A simple Darlington configuration with resistive feedback is used and has 13 dB gain, 50 GHz 3-dB bandwidth. This is the first demonstration of a integrated circuit in the transferred-substrate HBT process.

Keywords

III-V semiconductors; aluminium compounds; bipolar MIMIC; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 13 dB; 50 GHz; AlInAs-GaInAs; Darlington configuration; EHF; MM-wave IC; feedback amplifier; heterojunction bipolar transistors; resistive feedback; transferred-substrate HBT process; wideband amplifier; Bandwidth; Circuits; Cutoff frequency; Dielectric substrates; Fabrication; Feedback amplifiers; Heterojunction bipolar transistors; Inductance; MIM capacitors; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650489

Filename

650489