3D ReRAM with Field Assisted Super-Linear Threshold (FASTTM) Selector technology for super-dense, low power, low latency data storage systems

3D Resistive Ram (ReRAM) technology exhibits the best attributes to suit present and emerging non-volatile memory storage applications. However, the major challenge to make ReRAM work in a 3D crossbar array is the integration of a selector device with a ReRAM device. The selector device will need to solve the so called “sneak path” barrier and enable large density memory arrays with low power consumption. Here, we report a Field Assisted Superlinear Threshold (FAST^TM) Selector technology that overcomes the sneak path barrier with a selectivity ratio of 10E10. The switching and recover speed, on/off ratio, switching slope, program, erase, and read endurance, and variability of the FAST^TM selector will be discussed. Prototype 1S1R devices with the FASTTM selector integrated with a low current ReRAM cell have been demonstrated and characterized. Figure 1 shows the representative I-V characteristics of a ReRAM cell with integrated FAST^TM selector.