Low-frequency noise and performance of GaN p-n junction photodetectors

Author

Kuksenkov, D.V. ; Temkin, H. ; Osinsky, A. ; Gaska, R. ; Khan, M.A.

Author_Institution

Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

759

Lastpage

762

Abstract

We report on low-frequency noise characteristics of visible-blind GaN p-n junction photodetectors. Carrier hopping through defect states in the space charge region, believed to be associated with dislocations, is identified as the main mechanism responsible for the dark conductivity of the photodiodes. The dark current noise has the 1/f character and obeys the Hooge relation with /spl alpha//spl ap/3.

Keywords

1/f noise; III-V semiconductors; cryogenic electronics; dark conductivity; defect states; dislocations; gallium compounds; negative resistance devices; photodetectors; photodiodes; quantum interference devices; resonant tunnelling transistors; semiconductor device noise; semiconductor quantum wells; semiconductor storage; space charge; ultraviolet detectors5802324; 1/f character; GaN; GaN p-n junction photodetectors; Hooge relation; LF noise characteristics; UV detectors; carrier hopping; dark conductivity; dark current noise; defect states; dislocations; low-frequency noise; space charge region; visible-blind photodetectors; Conductivity; Dark current; Gallium nitride; Low-frequency noise; P-n junctions; Photodetectors; Photodiodes; Schottky barriers; Schottky diodes; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650493

Filename

650493