Title :
Process technologies for advanced metallization and interconnect systems
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
As device interconnects continue to scale, copper metallization and low dielectric constant materials will begin as soon as the 180 nm technology. The damascene approach with either CVD or PVD conformal coverage of good diffusion barrier layers, enhanced filling of Cu by CVD or electroplating as well as chemical-mechanical polishing of low-k material and Cu may be required to achieve high-level integration.
Keywords :
CVD coatings; ULSI; chemical vapour deposition; copper; dielectric thin films; electroplating; integrated circuit interconnections; integrated circuit metallisation; polishing; 180 nm; CMP; CVD conformal coverage; Cu; Cu metallization; PVD conformal coverage; advanced interconnect systems; advanced metallization systems; chemical-mechanical polishing; damascene; diffusion barrier layers; electroplating; low dielectric constant materials; process technologies; Aluminum; Atherosclerosis; Conductivity; Copper; Delay estimation; Dielectric constant; Filling; Integrated circuit interconnections; Metallization; Wiring;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650494
