DocumentCode
2000573
Title
A degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water
Author
Aoki, H. ; Yamasaki, S. ; Usami, T. ; Tsuchiya, Y. ; Ito, N. ; Onodera, T. ; Hayashi, Y. ; Ueno, K. ; Gomi, H. ; Aoto, N.
Author_Institution
ULSI Device Dev. Labs., NEC, Kanagawa, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
777
Lastpage
780
Abstract
A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.
Keywords
copper; Cu; Cu/HSQ damascene technology; TiN; TiN mask; degradation-free technology; electrolytic ionized water; metal mask patterning; photo-resist-mask process; post-CMP cleaning; ultra-pure cathode water; Cathodes; Chemicals; Cleaning; Copper; Degradation; Dielectric constant; Etching; Laboratories; Plasma applications; Plasma chemistry;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650497
Filename
650497
Link To Document