DocumentCode
2000599
Title
A highly reliable self-planarizing low-k intermetal dielectric for sub-quarter micron interconnects
Author
Matsuura, M. ; Tottori, I. ; Goto, K. ; Maekawa, K. ; Mashiko, Y. ; Hirayama, M.
Author_Institution
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
785
Lastpage
788
Abstract
In this paper we present a highly reliable IMD process using a new CVD chemistry. The key to the process is a unique gas chemistry of methylsilane and hydrogen peroxide, resulting in excellent gapfill and planarity with low-k of 2.75. Via-chain resistances using this process are just as low and stable as those using inorganic IMDs. This is likely attributable to the smaller amount of water outgassing with this process.
Keywords
chemical vapour deposition; dielectric thin films; integrated circuit interconnections; permittivity; 0.25 micron; CVD; HMO; gapfill; gas chemistry; hydrogen peroxide; methylsilane; organic IMD; planarity; reliability; self-planarizing low-k intermetal dielectric; sub-quarter micron interconnect; via-chain resistance; water outgassing; Chemistry; Dielectric constant; Dielectric materials; Geometry; Laboratories; Metallization; Organic materials; Plugs; Polymer films; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650499
Filename
650499
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