مرکز منطقه ای اطلاع رساني علوم و فناوري - Study Of The ESD Behavior Of Different Clamp Configurations In A 0.35/spl mu/m Cmos Technology

DocumentCode :

2000601

Title :

Study Of The ESD Behavior Of Different Clamp Configurations In A 0.35/spl mu/m Cmos Technology

Author :

Richier, C. ; Maene, N. ; Mabboux, G. ; Bellens, R.

Author_Institution :

SGS-THOMSON, 850 rue J.Monnet, BP16, 38921 Golles cedex, France

fYear :

1997

fDate :

25-25 Sept. 1997

Firstpage :

240

Lastpage :

245

Keywords :

Biological system modeling; CMOS technology; Capacitance; Clamps; Diodes; Electrostatic discharge; MOS devices; Protection; Silicides; Testing;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings

Conference_Location :

Orlando, FL, USA

Print_ISBN :

1-878303-69-4

Type :

conf

DOI :

10.1109/EOSESD.1997.634248

Filename :

634248

Link To Document :